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| polyfet rf devices LP722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V 15.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP 35.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 12.5 V, F = Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz 500 MHz VSWR Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 3.4 0.30 26.00 100.0 4.0 80.0 MIN 40 4.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.40 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.40 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 12.00 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/30/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LP722 POUT VS PIN GRAPH LP722 POUT VS PIN Freq=500MHz, VDS=12.5V, Idq=.4A 45 40 35 13.00 12.50 12.00 1000 CAPACITANCE VS VOLTAGE L1C 2DIE CAPACITANCE Coss 100 Pout 30 25 20 15 11.50 11.00 10.50 1dB compression = 35W Ciss Gain Efficiency = 57% 10.00 9.50 9.00 8.50 8.00 10 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 PIN IN WATTS Crss 1 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE L1C 2 DIE IV 30 100 ID & GM VS VGS L1C 2 DIE ID, GM vs VG 25 ID 10 20 ID IN AMPS 15 10 1 GM 5 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 0 2 4 6 8 10 12 14 vg=2v Vg=4v vg=10v vg=12v Vgs in Volts Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 04/30/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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